Apparatuses and methods for dram wordline control with reverse temperature coefficient delay

An apparatus comprising:

• a first inverter circuit;
• a second inverter circuit coupled to an output voltage of the first inverter circuit;
• and
• an RC circuit coupled between the first inverter circuit and the second inverter circuit, wherein the RC circuit is configured to delay transition of an output of the first inverter circuit a delay time in response to an input signal transition, wherein the delay time is inversely proportional to a temperature.

A method comprising:

• receiving a command signal at a memory device at a first time;
• deactivating a wordline of the memory device in response to the command signal at a second time, wherein the time between the first time and the second time is based, at least in part, on a propagation delay and a configurable delay;
• and
• adjusting the configurable delay based on a temperature of the memory device, wherein the adjusting comprises:
• increasing the configurable delay in response to a decrease in the temperature;
• and
• decreasing the configurable delay in response to an increase in the temperature.