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US 2020/0087195 A1Published application
Halogen doped optical fibers
AssigneeCorning Incorporated
InventorsSteven Bruce Dawes, Pushkar Tandon
Life of this patent
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Abstract
A method of forming an optical fiber preform includes: flowing a silicon halide and an oxidizer inside of a substrate tube, wherein a molar ratio of the silicon halide to the oxidizer is from about 1.5 to about 5.0; applying a plasma to the substrate tube to heat the substrate tube to a temperature of from about 1000° C. to about 1700° C.; and depositing silica glass comprising a halogen inside the substrate tube.
Claims19
A method of forming an optical fiber preform, comprising:
- flowing a silicon halide and an oxidizer inside of a substrate tube, wherein a molar ratio of the silicon halide to the oxidizer is from 1.5 to 4.0;
- applying energy to form a plasma from the silicon halide and the oxidizer, the plasma heating an inside surface of the substrate tube to a temperature of from about 1000° C. to about 1700° C.;
- and
- depositing silica glass from a reaction of the silicon halide and the oxidizer on the inside surface of the substrate tube, the silica glass comprising a halogen derived from the silicon halide.
1 more element
A method of forming an optical fiber preform, comprising:
- flowing a silicon halide and O2 inside of a substrate tube, wherein a molar ratio of the silicon halide to O2 is greater than 1.5;
- applying energy to form a plasma from the silicon halide and the O2, the plasma heating an inside surface of the substrate tube to a temperature of from about 1000° C. to about 1700° C.;
- and
- depositing silica glass from a reaction of the silicon halide and the O2 on the inside surface of the substrate tube, the silica glass comprising a halogen derived from the silicon halide at a concentration of 2.0 wt % or greater.
1 more element
A method of forming an optical fiber, comprising:
- flowing a silicon halide and O2 inside of a substrate tube, wherein a molar ratio of the silicon halide to O2 greater than 1.5, further wherein the partial pressure of the silicon halide and O2 within the substrate tube is about 50 Torr or less;
- applying energy to form a plasma from the silicon halide and the O2, the plasma heating an inside surface of the substrate tube to a temperature of from about 1000° C. to about 1400° C.;
- and
- depositing silica glass inside the substrate tube from a reaction of the silicon halide and the O2 on the inside surface of the substrate tube, the silica glass comprising a halogen derived from the silicon halide at a concentration of from about 2.0 wt % to about 7.0 wt %.
1 more element
Dependencies are inferred from the claim text.