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US 2020/0079926 A1Published application
On demand radiation induced constructive and deconstructive chemical reactions
AssigneeImmunolight, LLC
InventorsZakaryae FATHI, John PACANOVSKY, Frederic A. BOURKE, JR.
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Abstract
A method is provided for decomposition of a polymeric article, wherein the polymeric article contains a polymer and one or more energy modulation agents, by applying an applied energy to the polymeric article, wherein the one or more energy modulation agents convert the applied energy into an emitted energy sufficient to cause bond destruction within the polymer.
Claims22
1:
- A method for reclaiming materials from semiconductor components, comprising:
- providing the semiconductor component comprising a semiconductor integrated circuit bonded to a substrate at an interface through an intermediate layer, wherein the intermediate layer comprises an adhesive layer formed by curing a curable adhesive composition by application of a first x-ray source having a first x-ray energy, wherein the curable adhesive composition comprises one or more curable monomers and one or more energy modulation agents, whereby the one or more energy modulation agents absorbs the first x-ray energy and emit UV energy which initiates polymerization of the one or more monomers and thus cause curing of the curable adhesive composition;
- applying to the semiconductor component a second x-ray energy from a second x-ray source, wherein the second x-ray energy is different from the first x-ray energy, and wherein the second x-ray energy is absorbed by the one or more energy modulation agents which emit UV energy that is sufficient to cause destruction of bonds within the intermediate layer;
- and
- separating the semiconductor integrated circuit and substrate from one another.
2 more elements
2:
- The method of claim 1, wherein the first x-ray energy is lower energy than the second x-ray energy.
3:
- The method of claim 1, wherein the first x-ray energy is higher energy than the second x-ray energy.
4:
- The method of claim 2, wherein the first x-ray energy is from 1 kV to 250 kV, and the second x-ray energy is 1 MV or higher.
5:
- The method of claim 1, wherein the first x-ray energy has an energy of from 1 kV to 200 kV.
6:
- The method of claim 2, wherein the first x-ray energy has an energy of from 1 kV to 200 kV.
7:
- The method of claim 4, wherein the first x-ray energy has an energy of from 1 kV to 200 kV.
8:
- The method of claim 1, wherein the second x-ray energy has an energy of 1 MV or higher.
9:
- The method of claim 1, wherein the applying the second x-ray energy is performed while the semiconductor component is immersed in a chemical digestion bath comprising a medium and an acid compound.
10:
- The method of claim 1, wherein the applying the second x-ray energy is performed while the semiconductor component is heated to a temperature of from room temperature to 200° C.
11:
- The method of claim 9, wherein the immersed semiconductor component is also heated to a temperature of from room temperature to 200° C.
12:
- The method of claim 1, wherein the substrate is a flexible substrate.
13:
- A method for preparing a semiconductor component by bonding a semiconductor integrated circuit and a substrate at an interface therebetween, wherein the semiconductor integrated circuit and substrate are joined at the interface through an intermediate layer, comprising:
- providing an assembly of the semiconductor integrated circuit and substrate having the intermediate layer at the interface thereof, wherein the intermediate layer comprises an adhesive layer comprising a curable adhesive composition, wherein the curable adhesive composition comprises one or more curable monomers and one or more energy modulation agents;
- applying a first x-ray source having a first x-ray energy, whereby the one or more energy modulation agents absorb the first x-ray energy and emit UV energy which initiates polymerization of the one or more monomers and thus causes curing of the curable adhesive composition, thus bonding the semiconductor integrated circuit and substrate together;
- wherein the one or more energy modulation agents contained in the intermediate layer of the bonded semiconductor component can be used to separate the semiconductor integrated circuit and substrate from one another by applying to the semiconductor component a second x-ray energy from a second x-ray source, wherein the second x-ray energy is different from the first x-ray energy, and wherein the second x-ray energy is absorbed by the one or more energy modulation agents which then emit UV energy that is sufficient to cause destruction of bonds within the intermediate layer.
1 more element
14:
- The method of claim 13, wherein the first x-ray energy is lower energy than the second x-ray energy.
15:
- The method of claim 13, wherein the first x-ray energy is higher energy than the second x-ray energy.
16:
- The method of claim 14, wherein the first x-ray energy is from 1 kV to 250 kV, and the second x-ray energy is 1 MV or higher.
17:
- The method of claim 13, wherein the first x-ray energy has an energy of from 1 kV to 200 kV.
18:
- The method of claim 14, wherein the first x-ray energy has an energy of from 1 kV to 200 kV.
19:
- The method of claim 16, wherein the first x-ray energy has an energy of from 1 kV to 200 kV.
20:
- The method of claim 13, wherein the second x-ray energy has an energy of 1 MV or higher.
21:
- The method of claim 13, wherein the ease of debonding of the semiconductor component can be increased by applying the second x-ray energy while the semiconductor component is heated to a temperature of from room temperature to 200° C.
22:
- The method of claim 13, wherein the substrate is a flexible substrate.