Silicon photonics modulator using TM mode and with a modified rib geometry
AssigneeCiena Corporation
InventorsAlexandre D. Simard, Yves Painchaud
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Abstract
A silicon photonics modulator includes a rib that is a PN junction; a slab including a P doped region adjacent to the waveguide core on a first side and an N doped region adjacent to the waveguide core on a second side, opposite the first side; and a first electrode connected to the P-doped region and a second electrode connected to the N-doped region, wherein the rib is dimensioned to support guiding of a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab. The rib guides wavelengths in an infrared range in the TM mode.
Claims20
A silicon photonics modulator comprising:
- a rib that is a PN junction;
- a slab including a P doped region adjacent to the waveguide core on a first side and an N doped region adjacent to the waveguide core on a second side, opposite the first side;
- and
- a first electrode connected to the P-doped region and a second electrode connected to the N-doped region,
- wherein the rib is dimensioned to support guiding of a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab.
A silicon photonics modulator comprising:
- a first region of a waveguide defined by a depletion width of a PN junction;
- a second region of the waveguide defined by a remaining portion of the waveguide from the first region;
- a third region that is a slab area surrounding the waveguide and that includes a P-dopant on a first side adjacent the waveguide and an N-dopant on a second side adjacent the waveguide opposite the first side;
- and
- a fourth region surrounding the waveguide,
- wherein the first region has a width similar to a width of the waveguide, supporting a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab.
A method for providing a silicon photonics modulator comprising:
- providing a rib that is a PN junction;
- providing a slab including a P doped region adjacent to the waveguide core on a first side and an N doped region adjacent to the waveguide core on a second side, opposite the first side;
- and
- providing a first electrode connected to the P-doped region and a second electrode connected to the N-doped region,
- wherein the rib is dimensioned to support guiding of a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab.
Dependencies are inferred from the claim text.