Nitride light emitter

A nitride light emitter, comprising:

• a nitride semiconductor light-emitting element including an AlxGa1-xN substrate, where x ranges from 0 to 1, inclusive, and a multilayer structure disposed above the AlxGa1-xN substrate, the multilayer structure including a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked in stated order from the AlxGa1-xN substrate;
• and
• a submount substrate on which the nitride semiconductor light-emitting element is mounted,
• wherein the multilayer structure has a compressive mean strain relative to the AlxGa1-xN substrate,
• the nitride semiconductor light-emitting element is mounted on the submount substrate such that the multilayer structure and the submount substrate are opposed to each other, and
• the submount substrate comprises diamond.

A nitride light emitter, comprising:

• a nitride semiconductor light-emitting element including an AlxGa1-xN substrate, where x ranges from 0 to 1, inclusive, and a multilayer structure disposed above the AlxGa1-xN substrate, the multilayer structure including a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked in stated order from the AlxGa1-xN substrate;
• and
• a submount substrate on which the nitride semiconductor light-emitting element is mounted,
• the multilayer structure has a tensile or compressive mean strain of at most 5.2×10−4 relative to the AlxGa1-xN substrate,
• the AlxGa1-xN substrate has a thickness of 75 μm to 95 μm, inclusive,
• the nitride semiconductor light-emitting element is mounted on the submount substrate such that the multilayer structure and submount substrate are opposed to each other, and
• the submount substrate comprises diamond.