Temperature instability-aware circuit

A circuit, comprising:

• a first swing reduction circuit coupled between an input/output pad and a buffer circuit, wherein the first swing reduction circuit comprises a first p-type metal-oxide-semiconductor field-effect-transistor gated by a first bias voltage and comprises a second p-type metal-oxide-semiconductor field-effect-transistor drained by the first bias voltage;
• and
• a second swing reduction circuit coupled between the input/output pad and the buffer circuit.

A method, comprising:

• receiving an input voltage ranging from a first supply voltage to a second supply voltage;
• and
• either increasing a first voltage at a first node in a buffer circuit in response to the input voltage being equal to the first supply voltage, or decreasing a second voltage at a second node in the buffer circuit in response to the input voltage being equal to the second supply voltage, wherein the first voltage is increased to a first bias voltage applied to a gate of a first transistor that is coupled between the input voltage and the first node.