Amplfiers and related integrated circuits

A Doherty amplifier comprising:

• a first amplifier arrangement having a first amplifier input and a first amplifier output, wherein the first amplifier input receives a first portion of a radio frequency (RF) input signal, and the first amplifier arrangement amplifies the first portion of the RF input signal and provides an amplified first portion of the RF input signal at the first amplifier output;
• first impedance matching circuitry coupled between the first amplifier output and a first output of the circuit, wherein the first impedance matching circuitry receives the amplified first portion of the RF input signal and produces a first output signal at the first output of the circuit, and the first impedance matching circuitry includes
• a first inductive element coupled between the first amplifier output and the first output,
• a second inductive element coupled to the first amplifier output, and
• a first capacitive element coupled between the second inductive element and a ground reference voltage node, such that the second inductive element and the first capacitive element are configured electrically in series between the first amplifier output and the ground reference voltage node;
• a second amplifier arrangement having a second amplifier input and a second amplifier output, wherein the second amplifier input receives a second portion of the RF input signal, and the second amplifier arrangement amplifies the second portion of the RF input signal and provides an amplified second portion of the RF signal at the second amplifier output;
• and
• second impedance matching circuitry coupled between the second amplifier output and a second output of the circuit, wherein the second impedance matching circuitry receives the amplified second portion of the RF input signal and produces a second output signal at the second output of the circuit, and wherein the Doherty amplifier is configured so that the second output signal at the second output of the circuit is shifted by 90 degrees relative to the first output signal at the first output of the circuit, wherein the second impedance matching circuitry includes
• a third inductive element coupled between the second amplifier output and a first node,
• a fourth inductive element coupled between the first node and the second output, and
• a second capacitive element coupled between the first node and the ground reference voltage node.

A packaged electronic device comprising:

• a substrate;
• a first input package lead coupled to the substrate and configured to receive a first portion of a radio frequency (RF) input signal;
• a second input package lead coupled to the substrate and configured to receive a second portion of the RF input signal;
• a first output package lead coupled to the substrate;
• a second output package lead coupled to the substrate;
• a first transistor die that includes a first die input coupled to the first input package lead, and a first die output, wherein the first die input receives the first portion of the RF input signal, and the first transistor die amplifies the first portion of the RF input signal and provides an amplified first portion of the RF input signal at the first die output;
• a second transistor die that includes a second die input coupled to the second input package lead, and a second die output, wherein the second die input receives the second portion of the RF input signal, and the second transistor die amplifies the second portion of the RF input signal and provides an amplified second portion of the RF input signal at the second die output;
• first impedance matching circuitry coupled between the first die output and the first output package lead, wherein the first impedance matching circuitry receives the amplified first portion of the RF input signal and produces a first output signal at the first output package lead, and the first impedance matching circuitry includes
• a first inductive element coupled between the first die output and the first output package lead,
• a second inductive element coupled to the first die output, and
• a first capacitive element coupled between the second inductive element and a ground reference voltage node, such that the second inductive element and the first capacitive element are configured electrically in series between the first die output and the ground reference voltage node;
• and
• second impedance matching circuitry coupled between the second die output and the second output package lead, wherein the second impedance matching circuitry receives the amplified second portion of the RF input signal and produces a second output signal at the second output package lead, and wherein the second impedance matching circuitry includes
• a third inductive element coupled between the second die output and a first node,
• a fourth inductive element coupled between the first node and the second output package lead, and
• a second capacitive element coupled between the first node and the ground reference voltage node.