Diode laser with improved mode profile

A diode laser, comprising:

• an n-type first cladding layer,
• an n-type first waveguide layer disposed on said first cladding layer,
• an active layer which is suitable for radiation generation and which is arranged on the first waveguide layer,
• a p-type second waveguide layer disposed on said active layer,
• a p-type second cladding layer disposed on said second waveguide layer,
• wherein between the first waveguide layer and the active layer an n-type first intermediate layer is formed as a transition region, and
• between the second waveguide layer and the active layer a p-type second intermediate layer is formed as a transition region,
• wherein the boundaries between the individual layers are determined by the fact that at these locations the left-hand and right-hand differential quotient of the refractive index progression differs,
• wherein the first intermediate layer and/or the second intermediate layer is a GRIN layer,
• the sum of the layer thickness of the first waveguide layer and the layer thickness of the second waveguide layer being greater than, the layer thickness of the second waveguide layer being less than 350 nm, and
• wherein the difference between the maximum refractive index of said first waveguide layer and the refractive index of said first cladding layer is between 0.04 and 0.01,
• wherein
• the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5.