Nanoscale light emitting diode, and methods of making same
AssigneeUniversity of Pittsburgh—Of the Commonwealth System of Higher Education
InventorsHong Koo Kim, Daud Hasan Emon
Life of this patent
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Abstract
Various light emitting diode device embodiments that include emissive material elements, e.g., core-shell quantum dots, that are either (i) provided in nanoscale holes provided in an insulating layer positioned between an electron supply/transport layer and a hole supply/transport layer, or (ii) provided on a suspension layer positioned above and covering a nanoscale hole in such an insulating layer. Also, various methods of making such light emitting diode devices, including lithographic and non-lithographic methods.
Claims41
A light emitting diode device, comprising:
- an electron supply/transport layer;
- a hole supply/transport layer;
- an insulating layer provided between the electron supply/transport layer and the hole supply/transport layer, the insulating layer having a nanoscale hole provided therein;
- and
- a number of emissive material elements provided in the nanoscale hole, wherein the light emitting diode is structured such that responsive to forward bias conditions being applied to the light emitting diode a 2D electron gas forms at an interface of the electron supply/transport layer and the insulating layer and is injected into the number of emissive material elements at a periphery of the nanoscale hole.
A method of making a light emitting diode device, comprising:
- providing an electron supply/transport layer;
- providing an insulating layer on the electron supply/transport, the insulating layer having a nanoscale hole provided therein;
- providing a number of emissive material elements in the nanoscale hole;
- and
- providing a hole supply/transport layer on the number of emissive material elements;
- wherein the light emitting diode is structured such that responsive to forward bias conditions being applied to the light emitting diode a 2D electron gas forms at an interface of the electron supply/transport layer and the insulating layer and is injected into the number of emissive material elements at a periphery of the nanoscale hole.
A method of creating a nano-channel substrate, comprising:
- providing a material including a substrate, a first oxide layer on the substrate, and a plurality of nanoscale oxygen blocking particles on the first oxide layer;
- removing the first oxide layer and sinking the nanoscale oxygen blocking particles into the substrate;
- oxidizing the substrate having the nanoscale oxygen blocking particles sunk therein to create a second oxide layer on the substrate, the second oxide layer having at least a portion of each of the nanoscale oxygen blocking particles embedded therein;
- and
- removing the nanoscale oxygen blocking particles from the second oxide layer and leaving a plurality of nanoscale holes in the second oxide layer.
A method of creating a nano-channel substrate, comprising:
- providing a material including a substrate, an oxide layer on the substrate, and a plurality of nanoscale oxygen blocking particles on the oxide layer;
- depositing a dielectric layer on the oxide layer, the dielectric layer not completely covering the nanoscale oxygen blocking particles such that the dielectric layer has only a portion of each of the nanoscale oxygen blocking particles embedded therein;
- removing the nanoscale oxygen blocking particles from the dielectric layer and leaving a plurality of nanoscale openings in the dielectric layer;
- removing portions of the oxide layer through the nanoscale openings to create a plurality of nanoscale holes in the oxide layer;
- and
- removing the dielectric layer having the plurality of nanoscale openings therein from the oxide layer.
Dependencies are inferred from the claim text.