Quantum dot light emitting devices

A quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof;

• and ii) a polymer for hole injection or hole transport layer, comprising one or more triaryl aminium radical cations having the structure (S1)
• wherein each of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31, R32, R33, R34, and R35 is independently selected from the group consisting of hydrogen, deuterium, halogens, amine groups, hydroxyl groups, sulfonate groups, nitro groups, and organic groups, wherein two or more of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31, R32, R33, R34, and R35 are optionally connected to each other to form a ring structure;
• wherein one or more of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31, R32, R33, R34, and R35 is covalently bound to the polymer, and
• wherein A− is an anion.