Back to results
US 2020/0052214 A1Published application
Selective surface modification of otft source/drain electrode by ink jetting f4tcnq
AssigneePalo Alto Research Center Incorporated
InventorsPing Mei, Robert A. Street, Gregory L. Whiting, Sivkheng Kor, Steven E. Ready
Life of this patent
Estimating the term…
Abstract
A method and system utilizes ink jetting or printing of surface work function modification material or solution to form modified p-type and/or n-type electrodes. The proposed method is suitable for making complementary OTFT circuits in roll-to-roll fabrication environment.
Claims17
A complementary top gate OTFT comprising:
- a substrate;
- a buffer layer positioned on a surface of the substrate;
- patterned source and drain electrodes located on the buffer layer for a p-type OTFT and an n-type OTFT;
- at least one of (i) modified surfaces of the source and drain electrodes for the p-type OTFT, the modified surfaces of the source and drain electrodes for the p-type OTFT including a first surface work function modifier located on substantially only the surfaces of the source and drain electrodes for the p-type OTFT, and (ii) modified surfaces of the source and drain electrodes for the n-type OTFT, the modified surfaces of the source and drain electrodes for the n-type OTFT including a second surface work function modifier located on substantially only the surfaces of the source and drain electrodes for the n-type OTFT;
- a p-type of semiconductor material located in at least a channel region between the source and drain electrodes for the p-type-OTFT;
- an n-type of semiconductor material located in at least a channel region between the source and drain electrodes for the n-type OTFT;
- a dielectric layer deposited over the p-type semiconductor material, the n-type semiconductor material, and source and drain electrodes, including at least one of (i) the modified surfaces of the source and drain electrodes for the p-type OTFT, and (ii) the modified surfaces of the source and drain electrodes for the n-type OTFT;
- gate electrodes formed on a surface of the dielectric;
- and
- vias located through the dielectric layer to selected ones of the source and drain electrodes including at least one of (i) the modified surface of the source electrode for the p-type OTFT, and (ii) the modified surface of the drain electrode for the n-type OTFT, the vias filled with a conductive material.
7 more elements
A complementary top gate OTFT comprising:
- a substrate;
- a buffer layer positioned on a surface of the substrate;
- patterned source and drain electrodes located on the buffer layer for a p-type OTFT and an n-type OTFT;
- at least one of (i) modified surfaces of the source and drain electrodes for the p-type OTFT, the modified surfaces of the source and drain electrodes for the p-type OTFT including a first surface work function modifier located on substantially only the surfaces of the source and drain electrodes for the p-type OTFT, and (ii) modified surfaces of the source and drain electrodes for the n-type OTFT, the modified surfaces of the source and drain electrodes for the n-type OTFT including a second surface work function modifier located on substantially only the surfaces of the source and drain electrodes for the n-type OTFT;
- a p-type of semiconductor material located in at least a channel region between the source and drain electrodes for the p-type-OTFT;
- an n-type of semiconductor material located in at least a channel region between the source and drain electrodes for the n-type OTFT;
- a dielectric layer deposited over the p-type semiconductor material, the n-type semiconductor material, and source and drain electrodes, including at least one of (i) the modified surfaces of the source and drain electrodes for the p-type OTFT, and (ii) the modified surfaces of the source and drain electrodes for the n-type OTFT;
- gate electrodes formed on a surface of the dielectric;
- vias located through the dielectric layer to selected ones of the source and drain electrodes including at least one of (i) the modified surface of the source electrode for the p-type OTFT, and (ii) the modified surface of the drain electrode for the n-type OTFT, the vias filled with a conductive material;
- and
- a surface of at least one of the buffer layer and the substrate is roughened, prior to the at least one of (i) application of the first surface work function modifier onto the surfaces of the source and drain electrodes for the p-type OTFT, and (ii) application of the second surface work function modifier onto the surfaces of the source and drain electrodes for the n-type OTFT.
8 more elements
Dependencies are inferred from the claim text.