Electronic Semiconducting Device and Method for Preparing the Electronic Semiconducting Device

Electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises

• (i) at least one first hole transport matrix compound consisting of covalently bound atoms and
• (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and an at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms,
• wherein the metal cation of the electrical p-dopant is selected from
• alkali metals;
• alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd;
• rare earth metals in oxidation state (II) or (III);
• Al, Ga, In;
• and from
• Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less;
• provided that
• a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib)
• wherein
• A1, A2, A3 and A4 are independently selected from CO, SO2 or POR1;
• R1=electron withdrawing group selected from the group comprising halide, nitrile, halogenated or perhalogenated C1 to C20 alkyl, halogenated or perhalogenated C6 to C20 aryl, or halogenated or perhalogenated heteroaryl with 5 to 20 ring-forming atoms;
• B1, B2, B3 and B4 are same or independently selected from substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C1 to C20 heteroalkyl, substituted or unsubstituted C6 to C20 aryl, substituted or unsubstituted C5 to C20 heteroaryl, or B1 and B2 form a ring;
• b) p-dopants consisting of a divalent or trivalent metal cation and a carboxylate anion, and
• c) p-dopants consisting of Li cation and an anion selected from perchlorate and tetrafluoroborate
• are excluded.