Resistive switching memory with replacement metal electrode
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Hiroyuki Miyazoe, Seyoung Kim, Vijay Narayanan
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Abstract
A method is presented for facilitating oxygen vacancy generation in a resistive random access memory (RRAM) device. The method includes forming a RRAM stack having a first electrode and at least one sacrificial layer, encapsulating the RRAM stack with a dielectric layer, constructing a via resulting in removal of the at least one sacrificial layer of the RRAM stack, the via extending to a high-k dielectric layer of the RRAM stack, and forming a second electrode in the via such that the second electrode extends laterally into cavities defined by the removal of the at least one sacrificial layer.
Claims20
A method for facilitating oxygen vacancy generation in a resistive random access memory (RRAM) device, the method comprising:
- forming a RRAM stack having a first electrode and at least one sacrificial layer;
- encapsulating the RRAM stack with a dielectric layer;
- constructing a via resulting in removal of the at least one sacrificial layer of the RRAM stack, the via extending to a high-k dielectric layer of the RRAM stack;
- and
- forming a second electrode in the via such that the second electrode extends laterally into cavities defined by the removal of the at least one sacrificial layer.
A method for facilitating oxygen vacancy generation in a resistive random access memory (RRAM) device, the method comprising:
- forming a RRAM stack including a bottom electrode, a high-k dielectric layer, and a sacrificial top electrode;
- constructing a via resulting in removal of the sacrificial top electrode of the RRAM stack;
- and
- forming a replacement top electrode in the via, the replacement top electrode directly contacting sidewalls of the via such that depressions defined by the removal of the sacrificial top electrode are occupied by the replacement top electrode.
A semiconductor structure for facilitating oxygen vacancy generation in a resistive random access memory (RRAM) device, the semiconductor structure comprising:
- a RRAM stack disposed over a first conductive material, the RRAM stack including a bottom electrode, a high-k dielectric layer, and a replacement top electrode, the replacement top electrode extending within depressions defined by a dielectric material encapsulating the RRAM stack;
- and
- a second conductive material disposed within the replacement top electrode.
Dependencies are inferred from the claim text.