Method for manufacture of a cem device

A method for manufacture of a correlated electron material device which method comprises forming a conductive substrate and forming a layer of a correlated electron material on the conductive substrate,

• wherein the forming of the layer of the correlated electron material comprises:
• forming a layer of a metal rich transition or other metal compound, or combination thereof;
• and
• annealing the layer of the metal rich transition or other metal compound, or combination thereof, in a presence of a gaseous precursor for application of an electron back-donating extrinsic ligand capable of occupying an anion vacancy within the metal rich transition or other metal compound, or combination thereof;
• wherein the annealing provides that an anion vacancy within the metal rich transition or other metal compound, or combination thereof, is occupied by the electron back-donating extrinsic ligand capable of occupying the anion vacancy;
• and
• wherein the annealing is carried out at an annealing temperature and for an annealing duration to activate an electron back-donation from a transition or other metal cation to the electron back-donating extrinsic ligand capable of occupying the anion vacancy.