Selector device and method of making the same
AssigneeHuazhong University of Science and Technology
InventorsXiangshui MIAO, Qi LIN, Hao TONG
Life of this patent
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Abstract
A selector device including a first metal electrode layer, a second metal electrode layer and a switching layer disposed between the first metal electrode layer and the second metal electrode layer. The switching layer is a stacked assembly of ABA, BAB, AB or BA, where A is an ion supply layer, and B is a conversion layer. The ion supply layer includes a chalcogenide metal material having a metal content of more than 0% and not more than 50 wt. % with respect to the chalcogenide metal material. The conversion layer includes a chalcogenide material.
Claims15
A device, comprising:
- 1) a first metal electrode layer;
- 2) a second metal electrode layer;
- and
- 3) a switching layer disposed between the first metal electrode layer and the second metal electrode layer;
- wherein:
- the switching layer is a stacked assembly of ABA, BAB, AB or BA, where A is an ion supply layer, and B is a conversion layer;
- the ion supply layer comprises a chalcogenide metal material having a metal content of more than 0% and not more than 50 wt. % with respect to the chalcogenide metal material;
- and
- the conversion layer comprises a chalcogenide material.
A method, comprising:
- 1) providing a substrate;
- 2) depositing a first metal electrode layer on the substrate;
- 3) depositing an electrical insulating layer on the first metal electrode layer, and patterning the electrical insulating layer to obtain nanopores and expose the first metal electrode layer;
- 4) patterning the electrical insulating layer again, and alternately depositing an ion supply layer A and a conversion layer B to yield a stacked assembly of AB, BA, ABA, or BAB to form a switching layer;
- and
- 5) depositing a second metal electrode layer on the switching layer.
Dependencies are inferred from the claim text.