Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorJong-Chul PARK
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Abstract
A semiconductor device includes a stacked structure of cell structures, an electrode structure, and a heating electrode. Each cell structure includes a capping layer, a selection layer, a buffer layer, a variable resistance layer, and a upper electrode layer sequentially stacked. The electrode structure is in an opening passing through the stacked structure, is electrically isolated from the buffer layer, the variable resistance layer, and the upper electrode layer, and is electrically connected to the selection layer. The heating electrode is between the variable resistance layer and the upper electrode layer and operates to transfer heat to the variable resistance layer.
Claims19
A semiconductor device, comprising:
- a stacked structure including a plurality of cell structures stacked on a substrate, each of the plurality of cell structures including a capping layer, a selection layer, a buffer layer, a variable resistance layer, and a upper electrode layer sequentially stacked;
- an electrode structure in an opening through the stacked structure, the electrode structure being electrically isolated from the buffer layer, the variable resistance layer, and the upper electrode layer and being electrically connected to the selection layer;
- and
- a heating electrode between the variable resistance layer and the selection layer, the heating electrode to transfer heat to the variable resistance layer.
A semiconductor device, comprising:
- a stacked structure including a plurality of cell structures stacked on a substrate, each of the plurality of cell structures including an insulation pattern and a lower electrode layer stacked;
- a selective pattern on a sidewall of an opening through the stacked structure;
- an electrode structure on the selective pattern and filling the opening;
- a variable resistance layer between the lower electrode layer and the selective pattern, the variable resistance layer directly contacting the selective pattern;
- and
- a heating electrode between the variable resistance layer and the lower electrode layer, wherein the heating electrode directly contacts a portion of the variable resistance layer.
A semiconductor device, comprising:
- an electrode structure;
- and
- a plurality of cell structures in a stack,
- wherein each of the plurality of cell structures corresponds to a memory cell and includes a selection layer, a variable resistance layer, a heating layer, and an electrode layer, the electrode structure electrically connected to the selection layer and electrically isolated from the variable resistance layer, the heating layer, and the electrode layer, the heating layer to transfer heat to the variable resistance layer, and
- wherein each of the selection layer and the variable resistance layer includes a chalcogenide-based material.
Dependencies are inferred from the claim text.