Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHAI-DANG TRINH, FA-SHEN JIANG, HSING-LIEN LIN, CHII-MING WU
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Abstract
A semiconductor device includes a diffusion barrier structure, a bottom electrode, a top electrode over the bottom electrode, a switching layer and a capping layer. The bottom electrode is over the diffusion barrier structure. The top electrode is over the bottom electrode. The switching layer is between the bottom electrode and the top electrode, and configured to store data. The capping layer is between the top electrode and the switching layer. A thermal conductivity of the diffusion barrier structure is greater than approximately 20 W/mK.
Claims20
A semiconductor device, comprising:
- a diffusion barrier structure;
- a bottom electrode, over the diffusion barrier structure;
- a top electrode, over the bottom electrode;
- a switching layer, between the bottom electrode and the top electrode, and configured to store data;
- and
- a capping layer, between the switching layer and the top electrode, wherein a thermal conductivity of the diffusion barrier structure is greater than approximately 20 watts per meter kelvin (W/mK).
A semiconductor device, comprising:
- a bottom electrode;
- a top electrode, over the bottom electrode;
- a switching layer, between the bottom electrode and the top electrode, and configured to store data;
- a metal reservoir layer, between the switching layer and the top electrode;
- and
- a metal diffusion barrier layer, between the metal reservoir layer and the switching layer, wherein the metal diffusion barrier layer obstructs diffusion of metal ions from the metal reservoir layer to the switching layer.
A method for manufacturing semiconductor device, comprising:
- forming dielectric layer over a substrate, wherein the dielectric layer has an opening formed therein;
- forming a diffusion barrier structure in the opening;
- forming a bottom electrode over the diffusion barrier structure;
- forming a switching layer over the bottom electrode;
- forming a metal reservoir layer over the switching layer;
- and
- forming a top electrode over the metal reservoir layer, wherein a thermal conductivity of the diffusion barrier structure is greater than approximately 20 watts per meter kelvin (W/mK).
Dependencies are inferred from the claim text.