Methods of forming silicon-containing dielectric materials and methods of forming a semiconductor device
AssigneeMicron Technology, Inc.
InventorsThomas R. Omstead, Cole S. Franklin
Life of this patent
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Abstract
A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.
Claims20
A method of forming a silicon-containing dielectric material, comprising:
- exposing a material to a plasma comprising nitrogen radicals and an oxygen-containing precursor to absorb oxygen onto the material;
- and
- exposing the material comprising the absorbed oxygen to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon oxide material on the material.
A method of forming a semiconductor device, comprising:
- forming stacks comprising one or more chalcogenide materials;
- and
- forming a silicon nitride material or a silicon carbon nitride material on the stacks, comprising:
- exposing the stacks to a plasma comprising nitrogen radicals;
- absorbing nitrogen onto the stacks;
- and
- exposing the stacks comprising the absorbed nitrogen to a silicon-containing precursor in a non-plasma environment to form monolayers of silicon bonded to the absorbed nitrogen.
A method of forming a semiconductor device, comprising:
- forming stacks comprising one or more chalcogenide materials;
- and
- forming a silicon oxide material or a silicon carbon oxide material on the stacks, comprising:
- exposing the stacks to a plasma comprising nitrogen radicals and an oxygen-containing precursor;
- absorbing oxygen onto the stacks;
- and
- exposing the stacks comprising the absorbed oxygen to a silicon-containing precursor in a non-plasma environment to form monolayers of silicon bonded to the absorbed oxygen.
Dependencies are inferred from the claim text.