Storage element
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsGabriele Navarro, Mathieu Bernard, Marie-Claire Cyrille, Chiara Sabbione
Life of this patent
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Abstract
A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.
Claims17
A phase-change storage element comprising, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm, the element comprising a second portion crossing at least certain layers in the stack, made of an alloy of at least a portion of the components of the layers in the stack.
A method of manufacturing a storage element comprising forming a stack of amorphous layers, a thickness of each layer being smaller than or equal to 5 nm, the storage element comprising a second portion crossing at least certain layers in the stack, made of an alloy of at least part of the components of the layers in the stack.
Dependencies are inferred from the claim text.