Magnetic element
AssigneeNational Institute of Advanced Industrial Science and Technology
InventorsRie MATSUMOTO, Takayuki NOZAKI, Shinji YUASA, Hiroshi IMAMURA
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Abstract
According to an embodiment of the invention, a magnetic element includes a first magnetic layer and a first nonmagnetic layer. An angle θ0 between a first direction and the magnetization direction of the first magnetic layer satisfies 0°<θ0<90° or 90°<θ0<180° in a state in which neither a voltage nor a magnetic field is substantially applied to the first magnetic layer; and the first direction is from the first nonmagnetic layer toward the first magnetic layer. A resistance·area of the first nonmagnetic layer is 10 Ω·μm2 or more.
Claims8
A magnetic element, comprising:
- a first magnetic layer;
- and
- a first nonmagnetic layer,
- an angle θ0 between a first direction and a magnetization direction of the first magnetic layer satisfying 0°<θ0<90° or 90°<θ0<180° in a state in which neither a voltage nor a magnetic field is substantially applied to the first magnetic layer, the first direction being from the first nonmagnetic layer toward the first magnetic layer,
- a resistance·area of the first nonmagnetic layer being 10 Ω·μm2 or more.
A magnetic element, comprising:
- a first magnetic layer;
- and
- a first nonmagnetic layer,
- an angle θ0 between a first direction and a magnetization direction of the first magnetic layer satisfying 0°<θ0<90° or 90°<θ0<180° in a state in which neither a voltage nor a magnetic field is substantially applied to the first magnetic layer, the first direction being from the first nonmagnetic layer toward the first magnetic layer,
- bidirectional information writing being performed by applying a unipolar voltage to the first magnetic layer via the first nonmagnetic layer.
A magnetic element, comprising:
- a first magnetic layer;
- and
- a first nonmagnetic layer,
- an angle θ0 between a first direction and a magnetization direction of the first magnetic layer satisfying 0°<θ0<90° or 90°<θ0<180° in a state in which neither a voltage nor a magnetic field is substantially applied to the first magnetic layer, the first direction being from the first nonmagnetic layer toward the first magnetic layer,
- a resistance·area of the first nonmagnetic layer being 10 Ω·μm2 or more,
- bidirectional information writing being performed by applying a unipolar voltage to the first magnetic layer via the first nonmagnetic layer.
Dependencies are inferred from the claim text.