Composite storage layer for magnetic random access memory devices
AssigneeHeFeChip Corporation Limited
InventorsQinli Ma, Youngsuk Choi, Shu-Jen Han
Life of this patent
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Abstract
A composite storage layer for magnetic memory devices includes a first ferromagnetic layer, a tri-layered spacer stack disposed on the first ferromagnetic layer, a second ferromagnetic layer disposed on the tri-layered spacer stack, and an oxide capping layer on the second ferromagnetic layer. The tri-layered spacer stack comprises a first non-magnetic layer, a discontinuous, insulating oxide layer, and a second non-magnetic layer. The discontinuous, insulating oxide layer is sandwiched by the first non-magnetic layer and the second non-magnetic layer.
Claims28
A composite storage layer for magnetic memory devices, comprising:
- a first ferromagnetic layer;
- a tri-layered spacer stack disposed on the first ferromagnetic layer;
- a second ferromagnetic layer disposed on the tri-layered spacer stack;
- and
- an oxide capping layer on the second ferromagnetic layer.
A magnetic tunnel junction (MTJ) element for magnetic memory devices, comprising:
- a reference layer;
- a tunnel barrier layer contacting the reference layer;
- and
- a composite storage layer contacting the tunnel barrier layer;
- wherein the composite storage layer comprises a first ferromagnetic layer, a tri-layered spacer stack disposed on the first ferromagnetic layer, a second ferromagnetic layer disposed on the tri-layered spacer stack, and an oxide capping layer on the second ferromagnetic layer.
Dependencies are inferred from the claim text.