Magnetic tunnel junction element with a robust reference layer
AssigneeHeFeChip Corporation Limited
InventorsQinli Ma, Youngsuk Choi, Shu-Jen Han
Life of this patent
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Abstract
A magnetic tunnel junction (MTJ) element including a free layer, a reference layer; and a tunnel barrier layer between the free layer and the reference layer. The reference layer includes a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a texture decoupling layer, a polarization enhancement layer, and a coupling enhancement (CE) structure between the texture decoupling layer and the second pinned layer.
Claims19
A magnetic tunnel junction (MTJ) element, comprising:
- a free layer;
- a reference layer comprising a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a texture decoupling layer, a polarization enhancement layer, and a coupling enhancement (CE) structure between the texture decoupling layer and the second pinned layer;
- and
- a tunnel barrier layer between the free layer and the reference layer.
A magnetoresistive random access memory (MRAM) device, comprising:
- a bottom electrode;
- a top electrode;
- and
- a magnetic tunnel junction (MTJ) element between the bottom electrode and the top electrode;
- wherein the MTJ element comprises:
- a free layer;
- a reference layer comprising a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a texture decoupling layer, a polarization enhancement layer, and a coupling enhancement (CE) structure between the texture decoupling layer and the second pinned layer;
- and
- a tunnel barrier layer between the free layer and the reference layer.
Dependencies are inferred from the claim text.