Semiconductor device

Abstract

Disclosed in an embodiment is a semiconductor device including a light-emitting structure which includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a recess passing through the second conductive semiconductor layer, the active layer, and a portion of the first conductive semiconductor layer, a conductive layer electrically connected to the second conductive semiconductor layer, and a bonding pad disposed to be spaced apart from the light-emitting structure, wherein the active layer is divided into an inactive region and an active region by the recess, the conductive layer is electrically connected to the active region, and the conductive layer includes a stepped portion overlapping the recess in a vertical direction.

Dependencies are inferred from the claim text.