Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a semiconductor substrate;
• a first metal layer on the semiconductor substrate;
• a second metal layer on the first metal layer, the second metal layer containing Au;
• an insulating layer on the second metal layer;
• an epitaxial growth layer on the insulating layer, the epitaxial growth layer containing Ga, the epitaxial growth layer having an uneven surface;
• and
• a first electrode layer on the epitaxial growth layer, wherein
• the semiconductor substrate, the first metal layer, the second metal layer, the insulation layer, the epitaxial growth layer, and the first electrode are formed in this order.

A semiconductor light emitting device comprising:

• a semiconductor substrate comprising a first surface;
• a first metal layer on the semiconductor substrate;
• a second metal layer on the first metal layer, the second metal layer containing Au;
• an epitaxial growth layer on the second metal layer, the epitaxial growth layer containing Ga;
• a semiconductor layer on the epitaxial growth layer, the semiconductor layer containing Ga;
• a first region formed on a surface of the epitaxial growth layer, the first region having an uneven surface;
• and
• a first electrode layer on the semiconductor layer, wherein
• the semiconductor substrate, the first metal layer, the second metal layer, the epitaxial growth layer, the semiconductor layer, the first region, and the first electrode are formed in this order, and
• the first region is formed so as to surround the first electrode layer when viewed in a first direction vertical to the first surface.