Micro light-emitting device and display apparatus

A display apparatus, comprising:

• a driving substrate comprising a plurality of pixel regions;
• and
• a plurality of a micro light-emitting devices, each of the plurality of the micro light-emitting devices comprising:
• an epitaxial structure, comprising:
• a first type semiconductor layer;
• a light-emitting layer disposed on the first type semiconductor layer;
• and
• a second type semiconductor layer disposed on the light-emitting layer;
• a first type pad disposed on the epitaxial structure and electrically connected to the first type semiconductor layer;
• a current commanding structure disposed on the epitaxial structure and electrically connected to the second type semiconductor layer, wherein an orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than a surface area of a surface of the second type semiconductor layer;
• and
• an insulating layer contacting a portion of the current commanding structure and a portion of the surface of the second type semiconductor layer, wherein the insulating layer has an opening exposing at least a portion of the portion of the current commanding structure;
• a first type electrode connection layer electrically connected the first type pad onto the driving substrate;
• and
• a second type electrode connection layer electrically connected the current commanding structure onto the driving substrate, wherein a contact resistance between the second type semiconductor layer and the current commanding structure is smaller than a contact resistance between the second type semiconductor layer and the second type electrode connection layer, and at least one of the plurality of the micro light-emitting devices is disposed in each of the plurality of the pixel regions.

A micro light-emitting device, comprising:

• an epitaxial structure, comprising:
• a first type semiconductor layer;
• a light-emitting layer disposed on the first type semiconductor layer;
• and
• a second type semiconductor layer disposed on the light-emitting layer;
• a first type pad disposed on the epitaxial structure and electrically connected to the first type semiconductor layer;
• a second type pad disposed on the epitaxial structure and electrically connected to the second type semiconductor layer, wherein the first type pad and the second type pad are located on two opposite sides of the light-emitting layer;
• and
• a current commanding structure disposed between the second type semiconductor layer and the second type pad, wherein the current commanding structure is a metal oxide, and the current commanding structure directly contacts one part of the second type semiconductor layer, wherein a contact resistance between the second type semiconductor layer and the current commanding structure is smaller than a contact resistance between the second type semiconductor layer and the second type pad, and a contact area between the current commanding structure and the second type semiconductor layer is greater than a contact area between the current commanding structure and the second type pad.