Light emitting diode

A light emitting diode, comprising:

• a semiconductor structure comprising a first-type semiconductor layer, a second-type semiconductor layer and a light emitting layer disposed between the first-type semiconductor layer and the second-type semiconductor layer;
• an insulating structure disposed over the semiconductor structure, the insulation layer comprising a first insulating layer and a distributed Bragg reflector (DBR) layer attached to the first insulating layer;
• a first patterned metal layer disposed between the insulating structure and the first-type semiconductor layer and electrically connected to the first-type semiconductor layer, wherein the first patterned metal layer comprises at least one first welding portion;
• a second patterned metal layer disposed between the insulating structure and the second-type semiconductor layer, wherein the second patterned metal layer comprises at least one second welding portion;
• a current dispersion layer formed over the second-type semiconductor layer and disposed between the second patterned metal layer and the semiconductor structure, wherein the second patterned metal layer is electrically connected to the first-type semiconductor layer through the current dispersion layer;
• and
• a first electrode layer and a second electrode layer apart disposed on the insulating structure,
• wherein the insulating structure has at least one first through hole exposing a portion of the welding portion of the first patterned metal layer and has at least one second through hole exposing a portion of the welding portion of the second patterned metal layer, wherein the first electrode layer and a second electrode layer are electrically connected to the first patterned metal layer and the second patterned metal layer through the first through hole and the second through hole, respectively,
• wherein the DBR layer of the insulating structure is not overlapped with the first welding portion of the first patterned metal layer and the second welding portion of the second patterned metal layer, respectively.

A light emitting diode, comprising:

• a semiconductor structure comprising a first-type semiconductor layer, a second-type semiconductor layer and a light emitting layer disposed between the first-type semiconductor layer and the second-type semiconductor layer, wherein the semiconductor structure has at least one groove to expose the first-type semiconductor layer;
• an insulating structure disposed over the semiconductor structure;
• a current dispersion layer disposed between the semiconductor structure and the insulating structure and formed over the second-type semiconductor layer;
• and
• a first electrode layer and a second electrode layer apart disposed on the insulating structure, wherein the first electrode layer is electrically connected to the first-type semiconductor layer by penetrating through the groove, and the second electrode layer is electrically connected to the second-type semiconductor through the current dispersion layer,
• wherein the first electrode layer and the second electrode layer are not overlapped with the at least one groove, respectively.