Semiconductor device and semiconductor device package comprising same
AssigneeLG Innotek Co., Ltd.
InventorsKi Man KANG, Eun Dk LEE, Hyun Soo LIM, Youn Joon SUNG
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Abstract
Disclosed in an embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a reflective layer disposed on the second electrode and including a first metal; and a nitride of the first metal between the second electrode and the reflective layer.
Claims20
A semiconductor device comprising:
- a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
- a first electrode electrically connected to the first conductive semiconductor layer;
- a second electrode electrically connected to the second conductive semiconductor layer;
- and
- a reflective layer disposed on the second electrode and including a first metal,
- wherein the reflective layer reflects light in an ultraviolet wavelength band, which is emitted from the active layer,
- the second electrode includes a first layer and a second layer disposed between the first layer and the reflective layer,
- the first layer includes a metal oxide,
- the second layer includes a metal oxynitride, and
- a region between the second layer and the reflective layer includes a nitride of the first metal and an oxide of the first metal.
A semiconductor device package comprising:
- a body;
- and
- a semiconductor device disposed in the body,
- wherein the semiconductor device includes
- a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer,
- a first electrode electrically connected to the first conductive semiconductor layer,
- a second electrode electrically connected to the second conductive semiconductor layer, and
- a reflective layer disposed on the second electrode and including a first metal,
- wherein the reflective layer reflects light in an ultraviolet wavelength band, which is emitted from the active layer,
- the second electrode includes a first layer and a second layer disposed between the first layer and the reflective layer,
- the first layer includes a metal oxide,
- the second layer includes a metal oxynitride, and
- a region between the second layer and the reflective layer includes a nitride of the first metal and an oxide of the first metal.
Dependencies are inferred from the claim text.