Perovskite light-emitting diode and fabricating method thereof

A perovskite light-emitting diode, comprising:

• a base substrate,
• a pixel defining layer disposed on the base substrate,
• a plurality of openings disposed on the pixel defining layer,
• a plurality of anodes disposed on the base substrate and respectively located in the plurality of openings,
• a plurality of hole transport layers respectively disposed in the plurality of openings and located on the plurality of anodes,
• a plurality of light-emitting layers respectively disposed in the plurality of openings and located on the plurality of hole transport layers,
• a plurality of electron transport layers disposed in the plurality of openings respectively and located on the plurality of light-emitting layers, and
• a plurality of cathodes disposed on the plurality of electron transport layers respectively;
• wherein the perovskite light-emitting layer comprises a perovskite material and a polymer material doped in the perovskite material;

A fabricating method of a perovskite light-emitting diode, comprising:

• providing a backplane, wherein the backplane comprises a base substrate, a pixel defining layer disposed on the base substrate, a plurality of openings disposed on the pixel defining layer, and a plurality of anodes disposed on the base substrate and respectively located in the plurality of openings;
• forming a plurality of hole transport layers on the plurality of anodes in the plurality of openings respectively;
• forming a plurality of perovskite light-emitting layers on the plurality of hole transport layers in the plurality of openings respectively, wherein the perovskite light-emitting layer comprises a perovskite material and a polymer material doped in the perovskite material;
• forming a plurality of electron transport layers respectively on the perovskite light-emitting layers in the plurality of openings;
• and
• forming a plurality of cathodes respectively on the plurality of electron transport layers in the plurality of openings;
• wherein a mass percentage of the polymer material is of 10%-90% in the perovskite light-emitting layer and the perovskite material in the perovskite light-emitting layer is quantum dot particles;
• wherein the perovskite material comprises one or more of an organometallic halide perovskite material and an inorganic perovskite material;
• the organometallic halide perovskite material comprises one or more of CH3NH3PbBr3 and CH3NH3PbI3;
• the inorganic perovskite material comprises CsPbBr3;
• and the polymer material comprises one or more of polyimide and polyethylene oxide;
• wherein the plurality of perovskite light-emitting layers comprise a plurality of red perovskite light-emitting layers, a plurality of green perovskite light-emitting layers, and a plurality of blue perovskite light-emitting layers, the red perovskite light-emitting layer has a light-emitting wavelength of 630-690 nm, the green perovskite light-emitting layer has a light-emitting wavelength of 500-560 nm, and the blue perovskite light-emitting layer has a light-emitting wavelength of 420-480 nm.