Flip-chip light emitting diode, manufacturing method of flip-chip light emitting diode and display device including flip-chip light emitting diode

A manufacturing method of a flip-chip light emitting diode (LED) comprising:

• depositing a light-emitting layer, a p-type semiconductor layer, and an n-type semiconductor layer on a substrate, the p-type semiconductor layer and the n-type semiconductor layer being respectively laminated on an upper part and a lower part of the light-emitting layer;
• forming a plurality of light-emitting cells, each including the light-emitting layer, the n-type semiconductor layer, and the p-type semiconductor layer, by etching the light-emitting layer, the n-type semiconductor layer, and the p-type semiconductor layer;
• forming, with respect to each of the plurality of light-emitting cells, a first contact hole in the light emitting cell by etching the light-emitting layer, the n-type semiconductor layer, and the p-type semiconductor layer;
• depositing, with respect to each of the plurality of light-emitting cells, a first insulating layer on areas wherein etching was performed in the step of forming the plurality of light-emitting cells and on areas wherein etching was performed in the step of forming the first contact hole;
• depositing, with respect to each of the plurality of light-emitting cells, a metal layer on a first area surrounding an outer contour surface of the light-emitting cell, a second area where the first contact hole is formed, and a third area on one side among upper areas of the first insulating layer;
• depositing, with respect to each of the plurality of light-emitting cells, a second insulating layer on the second area where the first contact hole is formed;
• forming, with respect to each of the plurality of light-emitting cells, a second contact hole in another side surface area separate from areas where the metal layer is deposited among the upper areas of the first insulating layer;
• and
• forming, with respect to each of the plurality of light-emitting cells, a first electrode in the first contact hole, forming a second electrode in the second contact hole, and forming a third electrode in the third area where the metal layer is deposited.

A display device comprising:

• a plurality of light emitting diodes (LEDs);
• a plurality of driving electrodes;
• a display panel including a driving substrate;
• and
• a processor configured to control the display panel,
• wherein at least one LED among the plurality of LEDs is a flip-chip LED comprising:
• a light-emitting layer;
• an n-type semiconductor layer and a p-type semiconductor layer that are respectively laminated on an upper part and a lower part of the light-emitting layer;
• a first electrode that is electrically connected to the n-type semiconductor layer via a first contact hole formed in the LED;
• a second electrode that is electrically connected to the p-type semiconductor layer, and is electrically insulated from the first electrode;
• a metal layer provided in a first area surrounding an outer contour surface of the flip-chip LED, a second area where the first contact hole is foiled, and a third area separate from areas where the first electrode and the second electrode are formed;
• a third electrode that is formed on the metal layer in the third area, is electrically connected to the metal layer, and is electrically insulated from the first electrode and the second electrode;
• and
• a plurality of insulating layers that are provided on upper and lower parts of the metal layer such that the metal layer is electrically insulated from the first electrode and the second electrode.