Heterostructure optoelectronic device for emitting and detecting electromagnetic radiation, and manufacturing process thereof

A process for manufacturing an optoelectronic device, comprising:

• forming a bottom cathode structure, formed by a bottom semiconductor material of a semiconductor body and having a first type of conductivity;
• forming a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material, different from the bottom semiconductor material;
• forming, in the bottom cathode structure, a receiver anode region having a second type of conductivity, said receiver anode region being formed by the bottom semiconductor material;
• and
• forming, on the buffer region, an emitter that includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

An optoelectronic device comprising:

• a first semiconductor structure of a first semiconductor material and a first conductivity type;
• a second semiconductor structure of a second semiconductor material arranged on the first semiconductor structure, the second semiconductor material being a wide band gap material that is different from the first semiconductor material;
• an emitter configured to emit photons, the emitter including a first semiconductor junction formed by a first cathode region of the second semiconductor structure and having the first conductivity type, and a first anode region having a second conductivity type and arranged on the first cathode region;
• and
• a receiver configured to receive and detect photons, the receiver being formed in the first semiconductor structure and including a second semiconductor junction formed by a first cathode region of the first conductivity type and a second anode region of the second conductivity type.