Photodiode and photosensitive device
AssigneesIbaraki University, JX Nippon Mining & Metals Corporation
InventorsHaruhiko UDONO, Toshiaki ASAHI
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Abstract
Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.
Claims10
A photodiode comprising:
- a pn junction of a magnesium silicide crystal;
- an electrode comprising a material that is in contact with p-type magnesium silicide;
- and an electrode comprising a material that is in contact with n-type magnesium silicide,
- wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium, and
- the material that is in contact with p-type magnesium silicide is at least one metal selected from the group consisting of nickel, cobalt, platinum, palladium, iridium, rhenium, rhodium, beryllium, selenium, and tellurium, or at least one alloy thereof.
(canceled)
Dependencies are inferred from the claim text.