High photoelectric conversion efficiency solar cell and method for manufacturing high photoelectric conversion efficiency solar cell

A solar cell which has, on a first main surface of a semiconductor substrate having a first conductivity type, a base layer having the first conductivity type and an emitter layer which is adjacent to the base layer and has a second conductivity type which is a conductivity type opposite to the first conductivity type,

• comprising:
• a base electrode which is electrically connected with the base layer;
• and
• an emitter electrode which is electrically connected to the emitter layer,
• wherein the solar cell comprises:
• dielectric films which are in contact with the base layer and the emitter layer on the first main surface;
• first insulator films which cover the emitter electrode, are placed on the dielectric films, and are arranged to have a gap at least on the base layer;
• and
• a base bus bar electrode placed at least on the first insulator films, and
• a distance of the gap between the first insulator films is 40 μm or more and (W+110) μm or less (where W is a width of the base layer in a gap direction).

A method for manufacturing a solar cell comprising:

• forming, on a first main surface of a semiconductor substrate having a first conductivity type, a base layer having the first conductivity type and an emitter layer which is adjacent to the base layer and has a second conductivity type which is a conductivity type opposite to the first conductivity type;
• forming dielectric films which are in contact with the base layer and the emitter layer on the first main surface;
• forming a base electrode electrically connected with the base layer;
• and
• forming an emitter electrode electrically connected with the emitter layer,
• wherein the method comprises:
• forming first insulator films so that they cover the emitter electrode, are placed on the dielectric films, and have a gap at least on the base layer;
• and
• forming a base bus bar electrode at least on the first insulator films, and
• forming the first insulator films, the insulator films are formed while setting a distance of the gap between the first insulator films to 40 μm or more and (W+110) μm or less (where W is a width of the base layer in a gap direction).