Photoelectric conversion element and photoelectric conversion element manufacturing method

Abstract

A method of manufacturing a photoelectric conversion element according to the present disclosure includes the steps of: preparing a semiconductor substrate including an n-type semiconductor portion and a p-type semiconductor portion, which forms a diode together with the n-type semiconductor portion; forming an n-side underlying conductive layer on at least apart of the n-type semiconductor portion; forming a p-side underlying conductive layer on at least a part of the p-type semiconductor portion; immersing the n-side underlying conductive layer and the p-side underlying conductive layer in a plating solution; and forming plating layers on at least a part of the n-side underlying conductive layer and at least a part of the p-side underlying conductive layer by feeding electricity to the n-side underlying conductive layer, under a state in which the n-side underlying conductive layer and the p-side underlying conductive layer are electrically connected by the diode alone.

Dependencies are inferred from the claim text.