Amorphous oxide semiconductor film, oxide sintered body, and thin film transistor
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuyoshi INOUE, Masatoshi SHIBATA
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Abstract
A sintered oxide includes an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2θ) range defined by (A) to (F) below as measured by X-ray (Cu—K α ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).
Claims19
A sintered oxide comprising an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2θ) range defined by (A) to (F) below as measured by X-ray (Cu—K α ray) diffraction measurement:
- 31.0 to 34.0 degrees (A);
- 36.0 to 39.0 degrees (B);
- 50.0 to 54.0 degrees (C);
- 53.0 to 57.0 degrees (D);
- 9.0 to 11.0 degrees (E);
- and
- 19.0 to 21.0 degrees (F).
An amorphous oxide semiconductor film comprising indium oxide, gallium oxide and aluminum oxide as main components, the amorphous oxide semiconductor film satisfying atomic ratios as defined in formulae (8) to (10) below,
- 0.08≤Ga/(In+Ga+Al)≤0.30 (8),
- 0.05<Al/(In+Ga+Al)<0.20 (9). and
- 0.40≤In/(In+Ga+Al)≤0.87 (10),
- where In, Al, and Ga represent the number of atoms of indium element, aluminum element, and gallium element in the amorphous oxide semiconductor film, respectively.
An amorphous oxide semiconductor film comprising indium oxide, gallium oxide and aluminum oxide as main components, wherein
- atomic ratios of indium element (In), gallium element (Ga), and aluminum element (Al) in an In—Ga—Al ternary composition diagram are in a range defined by (R1) to (R5) below,
- In:Ga:Al=0.51:0.30:0.19 (R1),
- In:Ga:Al=0.73:0.08:0.19 (R2),
- In:Ga:Al=0.87:0.08:0.05 (R3),
- In:Ga:Al=0.88:0.10:0.02 (R4), and
- In:Ga:Al=0.78:0.20:0.02 (R5).
Dependencies are inferred from the claim text.