Method of making a vertical pillar device and structure thereof
AssigneeAvago Technologies International Sales Pte. Limited
InventorQing Liu
Life of this patent
Estimating the term…
Abstract
A vertical pillar device includes a substrate, one or more pillars, a drain section, and a source section. The one or more pillars include a first end and a second end. The first end is connected to the substrate at a first interface. The substrate and the one or more pillars are made of different materials. The drain section surrounds the one or more pillars near the first end and away from the first interface. The source section connects to the one or more pillars at the second end.
Claims20
A vertical transistor, comprising:
- a substrate;
- a pillar comprising a first end and a second end, the first end connected to the substrate at a first interface, wherein the substrate and the pillar are made of different materials;
- a drain surrounding the pillar near the first end and away from the first interface;
- and
- a source connecting to the pillar at the second end.
A method of fabricating a vertical pillar device, comprising:
- forming one or more first pillars within a substrate;
- replacing the one or more first pillars with one or more second pillars, the one or more second pillars are formed with different material compared to the one or more first pillars, wherein the one or more second pillars are connected to the substrate at an interface;
- and
- forming a drain section near a bottom of the one or more second pillars and spaced away from the interface.
A method of fabricating a vertical transistor, the method comprising:
- forming one or more pillars, the one or more pillars being formed with different material compared to a top surface of a substrate, wherein the one or more pillars are connected to the substrate at an interface;
- and
- forming a drain section near a bottom of the one or more pillars and spaced from the interface.
Dependencies are inferred from the claim text.