Semiconductor structure with source/drain multi-layer structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chieh WANG, Yu-Ting LIN, Yueh-Ching PAI, Shih-Chieh CHANG, Huai-Tei YANG
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Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over a fin structure and a gate spacer formed on a sidewall surface of the gate structure. The semiconductor structure also includes a first source/drain (S/D) epitaxial layer formed in the fin structure and adjacent to the gate spacer, and a second S/D epitaxial layer formed over the first S/D epitaxial layer. A top surface of the second S/D layer is higher than a top surface of the first S/D epitaxial layer.
Claims20
A semiconductor structure, comprising:
- a gate structure formed over a fin structure;
- a gate spacer formed on a sidewall surface of the gate structure;
- and
- a first source/drain (S/D) epitaxial layer formed in the fin structure and adjacent to the gate spacer;
- and
- a second S/D epitaxial layer formed over the first S/D epitaxial layer, wherein a top surface of the second S/D layer is higher than a top surface of the first S/D epitaxial layer.
A semiconductor structure, comprising:
- a gate structure formed over a fin structure;
- a gate spacer formed over the fin structure and on a sidewall surface of the gate structure;
- and
- a dielectric spacer formed on a portion of a sidewall surface of the gate spacer, wherein a topmost surface of the dielectric spacer is lower than a top surface of the gate spacer.
A method for forming a semiconductor structure, comprising:
- forming a gate structure over a fin structure;
- forming a source/drain (S/D) structure adjacent to the gate structure;
- forming a blocking layer on a top surface of the S/D structure;
- and
- selectively forming a dielectric spacer adjacent to the gate structure, wherein the a topmost surface of the dielectric spacer is lower than a top surface of the gate structure.
Dependencies are inferred from the claim text.