Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (ct)

A semiconductor device comprising:

• a first set of semiconductor fin structures on a first portion of a substrate;
• a second set of semiconductor fin structures on a second portion of the substrate;
• an isolation region separating the first and second portions of the substrate;
• a first gate structure on the first set of semiconductor fin structures, and a second gate structure on the second set of semiconductor fin structures;
• a gate cut isolation region present over the isolation region;
• and
• an oxygen scavenging metal containing layer on sidewalls of the gate cut isolation region that separates the gate cut isolation region from the first and second gate structures.

A semiconductor device comprising:

• a first set of nanosheets on a first portion of a substrate;
• a second set of nanosheets on a second portion of the substrate;
• an isolation region separating the first and second portions of the substrate;
• a first gate structure present on the first set of nanosheets;
• a second gate structure present on the second set of nanosheets;
• a gate cut isolation region present over the isolation region;
• and
• an oxygen scavenging metal containing layer is present on sidewalls of the gate cut isolation region that separates the gate cut isolation region from the first and second gate structures.