V-Shape Recess Profile for Embedded Source/Drain Epitaxy
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChii-Horng Li, Chih-Shan Chen, Roger Tai, Yih-Ann Lin, Yen-Ru Lee, Tzu-Ching Lin
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Abstract
A semiconductor device includes a semiconductor base. A dielectric isolation structure is formed in the semiconductor base. A source/drain of a FinFET transistor is formed on the semiconductor base. A bottom segment of the source/drain is embedded into the semiconductor base. The bottom segment of the source/drain has a V-shaped cross-sectional profile. The bottom segment of the source/drain is separated from the dielectric isolation structure by portions of the semiconductor base.
Claims20
A semiconductor device, comprising:
- a semiconductor material;
- an epi-layer disposed over the semiconductor material, wherein the epi-layer includes a protruding portion that protrudes into the semiconductor material, and wherein a lateral dimension of the protruding portion decreases as the protruding portion protrudes further into the semiconductor material;
- and
- an isolation structure disposed adjacent to the protruding portion of the epi-layer, wherein an upper surface of the isolation structure is disposed below an upper surface of the epi-layer.
A semiconductor device, comprising:
- a semiconductor material;
- a first source/drain of a transistor disposed over the semiconductor material, wherein a first segment of the first source/drain protrudes downwardly into the semiconductor material;
- a second source/drain of a transistor disposed over the semiconductor material, wherein a second segment of the second source/drain protrudes downwardly into the semiconductor material, and wherein the second source/drain is spaced apart from the first source/drain;
- and
- a dielectric structure disposed in the semiconductor material and between the first segment of the first source/drain and the second segment of the second source/drain;
- wherein:
- a majority portion of a side surface of the first segment is separated from the dielectric structure by a portion of the semiconductor material;
- or.
- a majority portion of a side surface of the second segment is separated from the dielectric structure by a portion of the semiconductor material.
A semiconductor device, comprising:
- a semiconductor material;
- a first source/drain having a first V-shaped portion embedded in the semiconductor material;
- a second source/drain having a second V-shaped portion embedded in the semiconductor material;
- a dielectric isolation structure disposed between the first V-shaped portion and the second V-shaped portion;
- wherein:
- the first source/drain and the second source/drain spaced apart from each other laterally;
- a majority of the first source/drain is disposed over the first V-shaped portion and has a substantially greater lateral dimension than the first V-shaped portion;
- a majority of the second source/drain is disposed over the second V-shaped portion and has a substantially greater lateral dimension than the second V-shaped portion;
- sidewalls of the dielectric isolation structure are separated from sidewalls of the first V-shaped portion and sidewalls of the second V-shaped portion by portions of the semiconductor material;
- and
- the dielectric isolation structure has a recessed upper surface.
Dependencies are inferred from the claim text.