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US 2020/0052120 A1Published application
Method for reducing contact resistance in semiconductor structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJean-Pierre COLINGE, Carlos H. DIAZ
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Abstract
Semiconductor structures and methods reduce contact resistance, while retaining cost effectiveness for integration into the process flow by introducing a heavily-doped contact layer disposed between two adjacent layers. The heavily-doped contact layer may be formed through a solid-phase epitaxial regrowth method. The contact resistance may be tuned by adjusting dopant concentration and contact area configuration of the heavily-doped epitaxial contact layer.
Claims20
A method, comprising:
- forming a fin over a substrate;
- forming a gate structure on the fin;
- forming an epitaxial layer over a source/drain (S/D) region of the fin adjacent to the gate structure;
- depositing a layer of doped amorphous material over the epitaxial layer;
- and
- crystallizing a portion of the layer of doped amorphous material to form a region of crystallized material over the epitaxial layer.
3 more elements
A method, comprising:
- forming a fin over a substrate;
- forming, on the fin, a gate structure on the fin with a sidewall;
- forming a sidewall spacer adjacent to the sidewall;
- doping a source/drain (S/D) region in the fin adjacent to the sidewall spacer;
- forming an epitaxial layer over the S/D region adjacent to the sidewall spacer;
- etching a portion of the epitaxial layer to expose a portion of fin sidewall;
- depositing a layer of doped amorphous material over the gate structure, the sidewall spacer, the epitaxial layer, and the exposed portion of fin sidewall;
- and
- crystallizing a portion of the layer of doped amorphous material to form a region of crystallized material over the epitaxial layer and the exposed portion of fin sidewall.
6 more elements
A method, comprising:
- forming a fin over a substrate;
- forming, over the fin, a first gate structure with a first sidewall and a first sidewall spacer;
- forming, over the fin, a second gate structure with a second sidewall and a second sidewall spacer, the second spacer opposing the first spacer;
- doping a source/drain (S/D) region in the fin between the first spacer and the second spacer;
- forming an epitaxial layer over the S/D region;
- etching a portion of the epitaxial layer to expose a portion of fin sidewall;
- depositing a layer of doped amorphous material over the first and second gate structures, the first and second sidewall spacers, the epitaxial layer and the exposed portion of fin sidewall;
- and
- crystallizing a portion of the layer of doped amorphous material to form a region of crystallized material over the epitaxial layer and the exposed portion of fin sidewall, wherein the region of crystallized material comprises a doping concentration higher than a doping concentration of the epitaxial layer.
6 more elements
Dependencies are inferred from the claim text.