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US 2020/0052117 A1Published application
Device isolation
AssigneeIntel Corporation
InventorsRishabh Mehandru, Stephen M. Cea, Tahir Ghani
Life of this patent
Estimating the term…
Abstract
Disclosed herein are structures and techniques for device isolation in integrated circuit (IC) assemblies. In some embodiments, an IC assembly may include multiple transistors spaced apart by an isolation region. The isolation region may include a doped semiconductor body whose dopant concentration is greatest at one or more surfaces, or may include a material that is lattice-mismatched with material of the transistors, for example.
Claims22
An integrated circuit (IC) assembly, comprising:
- a first transistor including a first portion of a semiconductor body;
- a second transistor including a second portion of the semiconductor body;
- and
- an isolation region between the first portion and the second portion, wherein the isolation region includes a dopant in the semiconductor body, and a concentration of the dopant decreases toward an interior of the semiconductor body.
1 more element
14-19. (canceled)
A computing device, comprising:
- a die, including:
- a semiconductor body,
- a first array of transistors formed on the semiconductor body,
- a second array of transistors formed on the semiconductor body, and
- an isolation region in the semiconductor body between the first array of transistors and the second array of transistors, when the isolation region includes a dopant in the semiconductor body, and a concentration of the dopant in the isolation region is greatest closest to a surface of the semiconductor body.
2 more elements
24-25. (canceled)
A computing device, comprising:
- a die, including:
- a semiconductor body,
- a first array of transistors formed on the semiconductor body,
- a second array of transistors formed on the semiconductor body, and
- an isolation region in the semiconductor body between the first array of transistors and the second array of transistors, when the isolation region includes a dopant in the semiconductor body, and a concentration of the dopant in the isolation region is greatest closest to a surface of the semiconductor body.
2 more elements
Dependencies are inferred from the claim text.