Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSEUNG KWON KIM, Yuri Masuoka
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate including first through third regions, a first transistor of a first conductivity type disposed on the first region of the substrate and including a first channel layer, in which the first channel layer includes a first material, a second transistor of a second conductivity type different from the first conductivity type disposed on the second region of the substrate and including a second channel layer, in which the second channel layer includes the first material, and a third transistor of the second conductivity type disposed on the third region of the substrate and including a third channel layer, in which the third channel layer includes a second material different from the first material.
Claims20
A semiconductor device comprising:
- a substrate including first through third regions;
- a first transistor of a first conductivity type disposed on the first region of the substrate and including a first channel layer, wherein the first channel layer includes a first material;
- a second transistor of a second conductivity type different from the first conductivity type disposed on the second region of the substrate and including a second channel layer, wherein the second channel layer includes the first material;
- and
- a third transistor of the second conductivity type disposed on the third region of the substrate and including a third channel layer, wherein the third channel layer includes a second material different from the first material.
A semiconductor device comprising:
- a first source of a first conductivity type;
- a first drain of the first conductivity type spaced apart from the first source;
- a first channel layer disposed between the first source and the first drain and including a first material;
- a first gate structure on the first channel layer;
- a second source of a second conductivity type different from the first conductivity type;
- a second drain of the second conductivity type spaced apart from the second source;
- a second channel layer disposed between the second source and the second drain and including a second material different from the first material;
- a second gate structure on the second channel layer;
- a third source of the second conductivity type;
- a third drain of the second conductivity type spaced apart from the third source;
- a third channel layer disposed between the third source and the third drain and including a third material different from the first and second materials;
- and
- a third gate structure on the third channel layer.
A semiconductor device comprising:
- a substrate including first and second regions;
- a first transistor of a first conductivity type disposed on the first region of the substrate and including a first channel layer including a first material;
- and
- a second transistor of the first conductivity type disposed on the second region of the substrate and including a second channel layer including a second material different from the first material,
- wherein the first transistor includes:
- a first source/drain disposed on each of both sides of the first channel layer and including a third material having a first concentration;
- and
- a first buffer layer disposed between the first channel layer and the first source/drain and including the third material having a second concentration smaller than the first concentration.
Dependencies are inferred from the claim text.