Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor region provided on the first electrode, the first semiconductor region being of a first conductivity type;
• a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;
• a third semiconductor region provided on a portion of the second semiconductor region, the third semiconductor region being of the first conductivity type;
• a gate electrode including
• a first portion opposing the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region in a first direction with a gate insulating portion interposed, the first direction being perpendicular to a second direction from the first electrode toward the first semiconductor region, and
• a second portion arranged with the first portion in a third direction perpendicular to the first direction and the second direction, the second portion opposing the second semiconductor region in the first direction with the gate insulating portion interposed, a lower end of the second portion being positioned higher than an interface between the first semiconductor region and the second semiconductor region;
• and
• a second electrode provided on the second semiconductor region and the third semiconductor region, the second electrode being electrically connected to the second semiconductor region and the third semiconductor region.