Finfet transistor

A semiconductor device, comprising:

• a semiconductor substrate having isolation regions formed therein;
• a fin-shaped semiconductor structure protruding vertically above the isolation regions and extending laterally in a first direction;
• and
• a gate dielectric wrapping a channel region of the fin-shaped semiconductor structure and a gate electrode wrapping the gate dielectric, the channel region being interposed in the first direction between a source region and a drain region,
• wherein the channel region has sloped sidewalls and a width that continuously decreases from a base towards a peak of the channel region, and
• wherein the channel region comprises a volume inversion region having a minimum width between about 3 nm and about 4 nm and a maximum width between about 4 nm and about 8 nm, the volume inversion region further having a height greater than about 25% of a total height of the channel region.