Semiconductor structure with current flow path direction controlling

A semiconductor structure with current flow path direction controlling, comprising

• a substrate;
• an epitaxial layer on said substrate and of a first conductivity type;
• a first doped region on said substrate, at one side of said epitaxial layer, and of said first conductivity type or a second conductivity type;
• a second doped region in said epitaxial layer, enclosed by said epitaxial layer, and of said second conductivity type, wherein a top of said second doped region is revealed from a top of said epitaxial layer;
• a third doped region in said epitaxial layer, between said second doped region and said first doped region, and of said second conductivity type, wherein said epitaxial layer separates said third doped region, said second doped region and said first doped region, and wherein a top of said third doped region is revealed from said top of said epitaxial layer;
• a fourth doped region in said third doped region, enclosed by said third doped region, and of said first conductivity type, wherein a top of said fourth doped region is revealed from said top of said third doped region;
• and
• a fifth doped region in said first doped region, enclosed by said first doped region, and of a conductivity type opposite to a conductivity type of said first conductivity type, wherein a top of said fifth doped region is revealed from a top of said first doped region, and wherein while said substrate receives a current, said current is selectively transmitted from said epitaxial layer, said first doped region, said second doped region, said third doped region, said fourth doped region, or said fifth doped region, and wherein a flow path direction of said current is controllable.