High power performance gallium nitride high electron mobility transistor with ledges and field plates
AssigneeQUALCOMM Incorporated
InventorsGengming TAO, Bin YANG, Xia LI
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Abstract
Certain aspects of the present disclosure provide a high electron mobility transistor (HEMT). The HEMT generally includes a gallium nitride (GaN) layer and an aluminum gallium nitride (AlGaN) layer disposed above the GaN layer. The HEMT also includes a source electrode, a gate electrode, and a drain electrode disposed above the AlGaN layer. The HEMT further includes n-doped protuberance(s) disposed above the AlGaN layer and disposed between at least one of: the gate electrode and the drain electrode; or the source electrode and the gate electrode. Each of the n-doped protuberances is separated from the gate electrode, the drain electrode, and the source electrode.
Claims25
A high electron mobility transistor (HEMT) comprising:
- a gallium nitride (GaN) layer;
- an aluminum gallium nitride (AlGaN) layer disposed above the GaN layer;
- a source electrode, a gate electrode, and a drain electrode disposed above the AlGaN layer;
- and
- one or more n-doped protuberances disposed above the AlGaN layer and disposed between at least one of:
- the gate electrode and the drain electrode;
- or
- the source electrode and the gate electrode, wherein each of the one or more n-doped protuberances is separated from the gate electrode, the drain electrode, and the source electrode.
A method for fabricating a high electron mobility transistor (HEMT), comprising:
- forming a gallium nitride (GaN) layer;
- forming an aluminum gallium nitride (AlGaN) layer above the GaN layer;
- forming a source electrode, a gate electrode, and a drain electrode above the AlGaN layer;
- and
- forming one or more n-doped protuberances above the AlGaN layer and between at least one of:
- the gate electrode and the drain electrode;
- or
- the source electrode and the gate electrode, wherein each of the one or more n-doped protuberances is separated from the gate electrode, the drain electrode, and the source electrode.
Dependencies are inferred from the claim text.