Group III-Nitride Semiconductor device and Corresponding Fabricating Method

Abstract

The invention relates to the group III-nitride semiconductor device and corresponding fabricating method. Specifically, a method to reduce RF dispersion in a group III-nitride high electron mobility transistor (HEMT), especially for reduced barrier thickness epi materials and scaled deices for higher frequency applications. Periodic n-type doping within barrier is used to screen surface state traps, which are responsible for the above-mentioned RF dispersion, without introducing additional gate leakage current path. Within the method, the barrier (typically AlGaN, AlInN) layer is periodically n-type doped with its composition (such as Al % within AlGaN) periodically modulated. The periodic structure is effective in both screening surface state traps and reducing the leakage current within the AlGaN/gate Schottky barrier. Therefore, the growth method could be used for fabricate the dispersion-free III-nitride based HEMT devices, which will be highly desirable for making high frequency materials and devices in the applications such as higher frequency wireless communications.

Dependencies are inferred from the claim text.