Semiconductor device and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Toshihiko TAKEUCHI, Naoto YAMADE, Hiroshi FUJIKI, Tomoaki MORIWAKA, Shunsuke KIMURA
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Abstract
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
Claims17
A semiconductor device comprising:
- a first conductor;
- a second conductor over the first conductor;
- a first insulator covering the second conductor;
- a first oxide over the first insulator;
- and
- a second oxide over the first oxide,
- wherein an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and
- wherein the second oxide is electrically connected to the first conductor through the opening.
A method for manufacturing a semiconductor device, comprising:
- forming a first conductive film over an insulating surface;
- forming a second conductive film over the first conductive film;
- patterning the second conductive film and the first conductive film to form a first conductor and a second conductor over the first conductor;
- forming a first insulating film to cover the first conductor and the second conductor;
- processing the first insulating film to expose the second conductor so that the first insulator is formed;
- forming a second insulator over the first insulator and the second conductor;
- forming a first oxide film over the second insulator;
- forming an opening overlapping with at least part of the first conductor in the first oxide film and the second insulator;
- forming a second oxide film over the first oxide film and the first conductor;
- and
- patterning the second oxide film and the first oxide film to form a first oxide and a second oxide over the first oxide.
A semiconductor device comprising:
- a first conductor;
- a first insulator over the first conductor;
- a first oxide over the first insulator;
- a second oxide over the first oxide;
- a third oxide over the second oxide;
- a second insulator over the third oxide;
- a second conductor over the second insulator;
- a third insulator provided on a side surface of the second insulator and a side surface of the second conductor;
- and
- a fourth insulator provided on a side surface of the third insulator,
- wherein an opening overlapping with part of the first conductor is provided in the first oxide and the first insulator, and
- wherein the second oxide is electrically connected to the first conductor through the opening.
A method for manufacturing a semiconductor device, comprising:
- forming a first insulating film over a first conductor and a second conductor;
- forming a first oxide film over the first insulating film;
- forming an opening overlapping with at least part of the first conductor in the first oxide film and the first insulating film;
- forming a second oxide film over the first oxide film and the first conductor;
- forming a third oxide film over the second oxide film;
- patterning the third oxide film, the second oxide film, and the first oxide film to form a first oxide, a second oxide over the first oxide, and a third oxide over the second oxide;
- forming a second insulating film to cover the first oxide, the second oxide, and the third oxide;
- forming a first conductive film over the second insulating film;
- patterning the first conductive film and the second insulating film to form a third conductor and a first insulator;
- forming a third insulating film to cover the third conductor and the first insulator;
- forming a fourth insulating film over the third insulating film;
- and
- processing the fourth insulating film and the third insulating film by etching to form a second insulator on a side surface of the third conductor and a side surface of the first insulator, and a third insulator on a side surface of the second insulator.
Dependencies are inferred from the claim text.