FETS and Methods of Forming FETS

A structure comprising:

• a raised portion of a substrate;
• fins on the raised portion of the substrate;
• an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins;
• a gate structure over the fins;
• and
• source/drain regions on opposing sides of the gate structure, wherein the source/drain regions comprises a non-faceted top surface and faceted side surfaces, each of the faceted side surfaces having a first facet, a second facet, and a third facet, the first facet and the third facet being non-parallel and non-perpendicular to a major surface of the substrate, the second facet being between the first facet and the third facet, the second facet being perpendicular to the major surface of the substrate.

A method comprising:

• forming a first fin over a substrate;
• forming a second fin over the substrate, the second fin being adjacent the first fin;
• forming an isolation region surrounding the first fin and the second fin;
• forming a first gate structure over the first fin and the second fin;
• recessing the first fin outside of the first gate structure to have a top surface below a top surface of the isolation region;
• recessing the second fin outside of the first gate structure to have a top surface below a top surface of the isolation region;
• forming a first source/drain region on the recessed first fin and the recessed second fin outside of the first gate structure, wherein forming the first source/drain region comprises:
• epitaxially growing a first epitaxial layer from the recessed first fin and the recessed second fin adjacent the first gate structure, the first epitaxial layer merging forming a continuous layer extending from the first recessed fin to the second recessed fin;
• etching the first epitaxial layer with a first etch process;
• epitaxially growing a second epitaxial layer on the etched first epitaxial layer;
• and
• etching the second epitaxial layer with a second etch process, the etched first epitaxial layer and the etched second epitaxial layer being part of the first source/drain region.