FinFETs with Deposited Fin Bodies
AssigneeMicron Technology, Inc.
InventorWerner Juengling
Life of this patent
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Abstract
Electronic apparatus, systems, and methods in a variety of applications can include a fin field effect transistor (FinFET) having a deposited fin body. Such a FinFET can be implemented as an access transistor in a circuit of an integrated circuit. In an embodiment, an array of FinFETs having a deposited fin bodies can be disposed on digitlines. For the array of FinFETs having a deposited fin bodies structured in memory cells of a memory, the digitlines can be coupled to sense amplifiers. Additional apparatus, systems, and methods are disclosed.
Claims20
A method of fabricating a device having a fin field effect transistor, the method comprising:
- forming a structure extending from a base on a substrate, including forming the structure having a first dielectric with a dielectric surface extending from the base, the structure having a first conductive region within the first dielectric with the first dielectric having a portion of the first dielectric on top of the first conductive region;
- depositing material on the dielectric surface and on the portion of the first dielectric on top of the first conductive region, forming a fin body of a fin field effect transistor;
- forming a second dielectric contacting the fin body on a surface of the fin body opposite the dielectric surface of the first dielectric;
- forming a second conductive region on the second dielectric, the second conductive region separated from the fin body by the second dielectric;
- and
- forming a doped region to the fin body.
A method of fabricating a device having multiple fin field effect transistors, the method comprising:
- forming a structure extending from a base on a substrate, including forming the structure having a first dielectric extending from the base, the structure having a first conductive region separated from a second conductive region by the first dielectric with the first dielectric having a portion of the first dielectric on top of the first conductive region and on top of the second conductive region;
- forming a second dielectric extending from the base with the second dielectric formed along and contacting the first conductive region;
- forming a third dielectric extending from the base with the third dielectric formed along and contacting the second conductive region such that the first conductive region and the second conductive region are within a dielectric region formed by the first, second, and third dielectric;
- depositing material on the dielectric region such that a first portion of the material is along and contacting the second dielectric opposite the first conductive region, a second portion of the material is along and contacting the third dielectric opposite the second conductive region, and a top portion of the material is on the portion of the first dielectric on top of the first and second conductive regions;
- forming a doped region on the top portion of the material;
- and
- removing a portion of the doped region and a portion of the top portion of the material on which the portion of the doped region is formed, such that a first fin body of a first fin field effect transistor is formed including the first portion of the material and a second fin body of a second fin field effect transistor is formed including the second portion of the material.
A device having a fin field effect transistor, the device comprising:
- a structure extending from a base on a substrate, the structure having a first dielectric with a dielectric surface extending from the base and having a first conductive region contacting the first dielectric on a side of the first conductive region, with the first dielectric having a portion of the first dielectric on top of the first conductive region;
- a deposited fin body of the fin field effect transistor on the dielectric surface and on the portion of the first dielectric on top of the first conductive region;
- a second dielectric contacting the fin body on a surface of the fin body opposite the dielectric surface of the first dielectric;
- a second conductive region adjacent and contacting the second dielectric, the second conductive region separated from the fin body by the second dielectric;
- and
- a doped region on and contacting the fin body.
Dependencies are inferred from the claim text.