Semiconductor device structure with metal gate stacks
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Hsuan HSIAO, Shu-Yuan KU, Chih-Chang HUNG, I-Wei YANG, Chih-Ming SUN
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first metal gate stack and a second metal gate stack over a semiconductor substrate. The semiconductor device structure also includes a dielectric layer surrounding the first metal gate stack and the second metal gate stack. The semiconductor device structure further includes an insulating structure between the first metal gate stack and the second metal gate stack. The insulating structure has a first convex surface facing towards the first metal gate stack.
Claims20
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a first, a second, a third, and a fourth metal gate stack over the semiconductor substrate;
- a dielectric layer surrounding the first, the second, the third, and the fourth metal gate stacks;
- and
- an insulating structure over the semiconductor substrate, wherein the insulating structure has a first portion, a second portion, and a third portion, the first portion electrically isolates the first metal gate stack from the second metal gate stacks, the second portion electrically isolates the third metal gate stack from the fourth metal gate stack, and the third portion links the first portion and the second portion.
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a first metal gate stack and a second metal gate stack over the semiconductor substrate;
- a dielectric layer surrounding the first metal gate stack and the second metal gate stack;
- and
- an insulating structure over the semiconductor substrate, wherein the insulating structure has a first portion and a second portion, the first portion is sandwiched between the first metal gate stack and the second metal gate stack, the second portion links the first portion without being sandwiched between the first metal gate stack and the second metal gate stack, and the first portion is wider than the second portion in a plan view.
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a first metal gate stack and a second metal gate stack over the semiconductor substrate;
- a dielectric layer surrounding the first metal gate stack and the second metal gate stack;
- and
- an insulating structure between the first metal gate stack and the second metal gate stack, wherein the insulating structure has a first convex surface facing towards the first metal gate stack.
Dependencies are inferred from the claim text.